In monolayer graphene, substitutional doping during growth can be used toalter its electronic properties. We used scanning tunneling microscopy (STM),Raman spectroscopy, x-ray spectroscopy, and first principles calculations tocharacterize individual nitrogen dopants in monolayer graphene grown on acopper substrate. Individual nitrogen atoms were incorporated as graphiticdopants, and a fraction of the extra electron on each nitrogen atom wasdelocalized into the graphene lattice. The electronic structure ofnitrogen-doped graphene was strongly modified only within a few latticespacings of the site of the nitrogen dopant. These findings show that chemicaldoping is a promising route to achieving high-quality graphene films with alarge carrier concentration.
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